First principles calculation of the thermal conductance of GaN/Si and GaN/SiC interfaces as functions of the interface conditions
First principles calculation of the thermal conductance of GaN/Si and GaN/SiC interfaces as functions of the interface conditions
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DOI：
10.1063/1.3242349
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发表时间：
2009-10
影响因子：
4
通讯作者：
M. Kazan
中科院分区：
文献类型：
--
作者：
M. Kazan
采用第一性原理计算和统计模型计算了GaN/Si和GaN/SiC界面的热导率。对于切向相关长度(L)为零的界面，GaN/Si和GaN/SiC的TC都随着界面粗糙度的增加而增加。在无限L下，GaN/Si的TC对界面粗糙度几乎不敏感，而GaN/SiC的TC随着界面粗糙度的增加而迅速降低。一般来说，当L=0时，TC随界面粗糙度的增加而增加，而当L=∞时，界面粗糙度对界面TC的影响取决于接触材料的声子特性。
First principles calculation and a statistical model are employed to calculate the thermal conductance (TC) of the interfaces GaN/Si and GaN/SiC. For an interface with zero tangential correlation length (L), TC of both GaN/Si and GaN/SiC increases with increasing the interface roughness. For an infinite L, TC of GaN/Si is almost insensitive to the roughness, while TC of GaN/SiC decreases rapidly with increasing the interface roughness. Generally speaking, for L=0, TC increases with increasing the interface roughness, whereas, for L=∞ the effect of the interface roughness on the interface TC depends on the phonon characteristics of the materials in contact.