Advances in group III-nitride-based deep UV light-emitting diode technology
Advances in group III-nitride-based deep UV light-emitting diode technology
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DOI：
10.1088/0268-1242/26/1/014036
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发表时间：
2011-01-01
影响因子：
1.9
通讯作者：
Weyers, M.
中科院分区：
文献类型：
--
作者：
Kneissl, M.;Kolbe, T.;Weyers, M.
本文综述了氮化铝铟氮紫外发光二极管（LED）的研究进展，总结了器件的性能和应用。性能的限制因素，高效率的紫外线发光二极管的确定和深紫外发射器的发展的最新进展。
The field of AlGaInN ultraviolet UV light-emitting diodes (LEDs) is reviewed, with a summary of the state-of-the-art in device performance and enumeration of applications. Performance-limiting factors for high-efficiency UV LEDs are identified and recent advances in the development of deep UV emitters are presented.