LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR
LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR
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DOI：
10.1109/t-ed.1969.16566
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发表时间：
1969-01-01
影响因子：
3.1
通讯作者：
GUMMEL, HK
中科院分区：
文献类型：
--
作者：
SCHARFETTER, DL;GUMMEL, HK
本文对硅p-n-v-ns读崩越二极管的大信号导纳和效率进行了理论计算。一个简化的理论，以获得一个开始的设计。这种设计，然后修改，以实现更高的效率操作的特定设备的限制，在大信号（计算机）操作达到。自洽的数值解方程描述载流子输运，载流子产生，和空间电荷平衡。这些解描述了二极管及其相关谐振电路随时间的演变。详细的解决方案的空穴和电子浓度，电场，终端电流和电压在不同的时间点在一个周期的振荡。二极管的负电导，磁阻，平均电压和发电效率的大信号值作为一个固定的平均电流密度的振荡幅度的函数。对于所研究的结构，最大的微波功率产生效率（18%，在9.6 GHz）已获得在电流密度为200 A/cm 2，但效率接近10%，获得了从100到1000 A/cm 2的电流密度范围内。
This paper presents theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode. A simplified theory is employed to obtain a starting design. This design is then modified to achieve higher efficiency operation as specific device limitations are reached in large-signal (computer) operation. Self-consistent numerical solutions are obtained for equations describing carrier transport, carrier generation, and space-charge balance. The solutions describe the evolution in time of the diode and its associated resonant circuit. Detailed solutions are presented of the hole and electron concentrations, electric field, and terminal current and voltage at various points in time during a cycle of oscillation. Large-signal values of the diode's negative conductance, susceptance, average voltage, and power-generating efficiency are presented as a function of oscillation amplitude for a fixed average current density. For the structure studied, the largest microwave power-generating efficiency (18 percent at 9.6 GHz) has been obtained at a current density of 200 A/cm2, but efficiencies near 10 percent were obtained over a range of current density from 100 to 1000 A/cm2.