Enhancement of Critical Current Density in ErBa2Cu3Oy Thin Films by Post-Annealing
Enhancement of Critical Current Density in ErBa2Cu3Oy Thin Films by Post-Annealing
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通过后退火提高 ErBa2Cu3Oy 薄膜的临界电流密度
DOI：
10.1143/jjap.43.l1223
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发表时间：
2004
影响因子：
1.5
通讯作者：
K. Kishio
中科院分区：
文献类型：
--
作者：
S. Horii;A. Ichinose;M. Mukaida;K. Matsumoto;Tohru Ohazama;Y. Yoshida;J. Shimoyama;K. Kishio
我们报道了在 720°C 和 760°C 两种不同脉冲激光沉积 (PLD) 温度下制造的 ErBa2Cu3Oy 薄膜，通过氧后退火仅几十分钟，临界电流密度 (Jc) 显着增加。与沉积态薄膜（0.3-0.5 MA·cm-2）相比，这些薄膜的Jc在350°C~500°C的退火温度范围内明显提高到1 MA·cm-2以上。即使在PLD方法等非平衡过程中，薄膜中氧含量的均匀化对于提高薄膜的临界电流性能也至关重要，这表明氧后退火是提高PLD-REBa2Cu3Oy涂层导体临界电流的实用方法。
We report a remarkable increase in critical current density (Jc) by oxygen post-annealing for only a few tens of minutes in ErBa2Cu3Oy films fabricated at two different pulsed-laser-deposition (PLD) temperatures of 720°C and 760°C. The Jc of these films were obviously enhanced to more than 1 MA·cm-2 in the annealing temperature range of 350°C–500°C in comparison with those of the as-deposited films (0.3–0.5 MA·cm-2). Even in a nonequilibrium process such as the PLD method, the homogenization of oxygen contents in films is crucial for enhancement of the films' critical current properties, which suggests that oxygen post-annealing is a practical process for improvement of critical current of PLD-REBa2Cu3Oy coated conductors.