Fabrication and characterization of InGaN p-i-n homojunction solar cell
Fabrication and characterization of InGaN p-i-n homojunction solar cell
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DOI：
10.1063/1.3254215
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发表时间：
2009-10-26
影响因子：
4
通讯作者：
Zhang, Bao-ping
中科院分区：
文献类型：
--
作者：
Cai, Xiao-mei;Zeng, Sheng-wei;Zhang, Bao-ping
研究了不同In含量的InxGa_（1-xN）p-i-n同质结太阳电池。对于x=0.02、0.12和0.15，测得的开路电压（V-oc）分别为2.24、1.34和0.96 V。通过X射线摇摆曲线、I-V特性和外量子效率的比较，证实了In含量增加导致InGaN晶体质量下降是V-oc降低的原因。结果表明，减少缺陷是氮化物太阳能电池制备的关键因素。(C)2009年美国物理学会。[doi：10.1063/1.3254215]
InxGa1-xN p-i-n homojunction solar cells with different In content are studied. The measured open circuit voltages (V-oc) are 2.24, 1.34, and 0.96 V, for x=0.02, 0.12, and 0.15, respectively. By comparing the x-ray rocking curves, the I-V characteristics and the external quantum efficiencies, it's demonstrated that the deterioration of InGaN crystal quality for larger In contents causes the decrease of V-oc. The result demonstrates that reduction of defect is a key factor in the fabrication of nitride solar cell. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3254215]