Characterization of In0.46Ga0.54P/n +-GaAs Heterostructures By Photoellipsometry
Characterization of In0.46Ga0.54P/n +-GaAs Heterostructures By Photoellipsometry
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通过光电椭圆光度法表征 In0.46Ga0.54P/n -GaAs 异质结构
DOI：
10.1143/jjap.35.1264
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
Yi
中科院分区：
文献类型：
--
作者：
T. Saitoh;Kenichi Watanabe;F. Hyuga;Yi
Photoellipsometry, a contactless optical method, was used for the characterization of In0.46Ga0.54P/n +-GaAs heterostructures exposed to room air. Two samples were studied, each containing an undoped In0.46Ga0.54P layer of thickness L (L=40 and 100 nm) grown on top of a heavily doped (100) GaAs substrate by metal-organic chemical vapor deposition. The measured spectra were analyzed using the Franz-Keldysh theory, with inclusion of broadening effects. The results of our specral analysis indicate that, for each sample investigated, there existed an almost uniform built-in electric field in the top layer. Using the built-in field strength obtained from the spectral analysis and the In0.46Ga0.54P layer thickness, we found that the surface Fermi level for each sample was pinned near mid-band-gap energy of In0.46Ga0.54P, with a value of 0.94–0.95 eV.
