TEM Assessment of AuTiAlTi and AuPdAlTi Ohmic Contacts to AlGaN/GaN
TEM Assessment of AuTiAlTi and AuPdAlTi Ohmic Contacts to AlGaN/GaN
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AuTiAlTi 和 AuPdAlTi 与 AlGaN/GaN 欧姆接触的 TEM 评估
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
P. Brown
中科院分区：
文献类型：
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作者：
M. Fay;I. Harrison;R. Balmer;B. T. Hughes;M. Uren;T. Martin;P. Brown
利用常规TEM和化学TEM分析，研究了在650 ~ 950°C温度范围内快速热退火的AlGaN/GaN与AuTiAlTi和AuPdAlTi的接触。在750°C或更高温度下退火的AuTiAlTi触点和在850°C或更高温度下退火的AuPdAlTi触点观察到欧姆行为。在高温退火后需要形成界面TiN来激活接触。在950℃退火时，样品在界面带内呈现TiN晶粒结构，TiN夹杂物进入AlGaN中，Al-Au扩散前缘出现。这些夹杂物的存在似乎对接触的电阻率没有任何影响。Ti和Pd扩散障碍都没有阻止Au通过Al和Ti接触层的相互扩散。这意味着在这些样品中使用的退火温度下，Au的存在介导了TiN的形成。
AuTiAlTi and AuPdAlTi contacts to AlGaN/GaN, rapid thermal annealed at temperatures ranging from 650 to 950 °C have been investigated using conventional and chemical TEM analysis. Ohmic behaviour was seen for AuTiAlTi contacts annealed at 750 °C or higher and in AuPdAlTi contacts annealed at 850 °C or higher. The formation of interfacial TiN after anneals at high temperatures is required to activate the contact. At anneals of 950 °C, the samples show a structure of TiN grains within an interfacial band, with TiN inclusions into the AlGaN preceded by an Al–Au diffusion front. The presence of these inclusions does not appear to have any effect on the resistivity of the contact. Neither Ti nor Pd diffusion barriers have prevented the interdiffusion of Au through the Al and Ti contact layers. The implication is that the presence of Au mediates the formation of TiN at the annealing temperatures used in these samples.