All-Oxide NiO/Ga2O3 p-n Junction for Self-Powered UV Photodetector
All-Oxide NiO/Ga2O3 p-n Junction for Self-Powered UV Photodetector
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用于自供电紫外光电探测器的全氧化物 NiO/Ga2O3 盘结
DOI：
10.1021/acsaelm.0c00301
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发表时间：
2020-07-28
影响因子：
4.7
通讯作者：
Tang, Weihua
中科院分区：
文献类型：
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作者：
Wang, Yachao;Wu, Chao;Tang, Weihua
近年来，Ga2O_3基自供电紫外光探测器因其在民用、医疗和环境监测等领域的潜在应用而引起了人们的极大兴趣。到目前为止，大多数p-n结光探测器都是用GaN和碳化硅等p型半导体制造的，这些半导体通常是非氧化物材料。结果是，在高温下与Ga(2)O(3)薄膜形成p-n结时，p型半导体被氧化，导电性能退化。在本工作中，我们选择氧化物NiO作为p型材料，利用射频反应磁控溅射系统在室温下制备了全氧化物NiO/Ga2O3p-n结，并制作了自供电紫外光探测器。由于第二类能带对齐，该光电探测器在0V的254 nm光照射下显示出57mA/W的响应率(R)，5.45×10(9)琼斯的探测率(D*)和122的I-光/I-暗比。此外，基于全氧化物NiO/Ga2O3p-n结的光电探测器在空气、氧气和真空中表现出良好的稳定性和重复性。我们的结果为大规模生产自供电紫外光探测器提供了一条廉价和合适的途径。
Recently, Ga2O3-based self-powered ultraviolet photodetectors have aroused great interest due to their potential applications in civil, medical, and environmental monitoring fields. So far, most p-n junction photodetectors are fabricated with p-type semiconductors like GaN and SiC, which are usually nonoxide materials. As a result, the p-type semiconductors are oxidized and the conductive properties degenerated when constructing a p-n junction with the Ga(2)O(3 )thin film at a high growth temperature. In this work, we chose the oxide NiO as the p-type material and used radio-frequency reactive magnetron sputtering system to fabricate the all-oxide NiO/Ga2O3 p-n junction at room temperature and manufacture the self-powered UV photodetector. Thanks to the type II band alignment, the photodetector exhibits a responsivity (R) of 57 mu A/W, a detectivity (D*) of 5.45 x 10(9) jones, and an I-light/I-dark ratio of 122 when exposed to a 254 nm light irradiation at 0 V. In addition, the photodetector based on the all-oxide NiO/Ga2O3 p-n junction shows good stability and reproducibility in air, oxygen, and vacuum. Our results provide an inexpensive and suitable pathway for the mass production of self-powered UV photodetectors.