Blue luminescence from Ce-doped ZnO thin films prepared by magnetron sputtering

Blue luminescence from Ce-doped ZnO thin films prepared by magnetron sputtering
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磁控溅射制备 Ce 掺杂 ZnO 薄膜的蓝色发光

DOI:
10.1007/s00339-012-6883-9
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发表时间:
2012-07-01
影响因子:
2.7
通讯作者:
Peng, D. L.
Peng, D. L.
中科院分区:
材料科学4区
文献类型:
--
作者:
Luo, Q.;Wang, L. S.;Peng, D. L.

文献摘要

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研究了直流磁控溅射制备的未掺杂和掺杂氧化锌薄膜的光致发光性能。结果表明,Ce的掺入对ZnO薄膜的结构、光学和光致发光性能有显著影响。未掺杂的ZnO薄膜表现出明显的紫外发光,而ce掺杂的ZnO薄膜则表现出较宽的蓝色发光。研究了激发波长和退火气氛对ce掺杂ZnO薄膜光致发光性能的影响。在空气和氧气环境中退火后,制备的薄膜的蓝色辐射被明显抑制。我们的研究结果表明,ce掺杂ZnO薄膜的蓝色发射与锌的间隙和Ce3+离子的本征跃迁有关。
The photoluminescence properties of undoped and Ce-doped ZnO thin films that were prepared by DC magnetron sputtering were investigated. It was found that the incorporation of Ce could intensively affect the structural, optical, and photoluminescence properties of the ZnO thin films. The undoped ZnO thin films showed a sharp UV luminescence, whereas the Ce-doped ZnO thin films showed a broad blue luminescence. The effects of excitation wavelength and annealing atmosphere on the photoluminescence properties of Ce-doped ZnO thin films were also studied. After post-annealing in air and oxygen atmospheres, the blue emissions of the prepared films were drastically suppressed. Our results indicate that the blue emissions of Ce-doped ZnO thin films are related to zinc interstitials and the intrinsic transition of Ce3+ions.