Observation of optical instabilities in the photoluminescence of InGaN single quantum well
Observation of optical instabilities in the photoluminescence of InGaN single quantum well
复制标题
DOI：
10.1063/1.2172144
复制
发表时间：
2006-02
影响因子：
4
通讯作者：
R. Micheletto;Masayoshi Abiko;A. Kaneta;Y. Kawakami;Y. Narukawa;T. Mukai
中科院分区：
文献类型：
--
作者：
R. Micheletto;Masayoshi Abiko;A. Kaneta;Y. Kawakami;Y. Narukawa;T. Mukai
我们研究了 InxGa(1−x)N 单量子阱系统中与空间不均匀性相关的特殊光学不稳定性（闪烁）现象。我们研究了这种动态现象的时间依赖性，并在系统上测试了“量子跃迁”单指数模型。对不同样品行为的比较分析表明，富含铟的局部中心参与了眨眼机制，并且不稳定行为随激发波长的不同而不同。我们的研究表明，局部发光中心与周围较弱发光区域之间的捕获和去捕获过程在载流子复合机制中起着重要作用。
We investigate a peculiar optical instability (blinking) phenomena associated with spatial inhomogeneity in InxGa(1−x)N single quantum well systems. We studied the time dependence of this dynamic phenomenon and tested a “quantum jump” single exponential model on the system. A comparative analysis of the behavior of different samples suggests that indium-rich localized centers participate in the mechanism of blinking and that the instability behavior differs with the excitation wavelength. Our study indicates that the trapping and de-trapping process between the localized-luminescent centers and surrounding less luminous regions plays important roles in the carrier recombination mechanism.