CdS nanowires array on Cd foil: synthesis and optical properties
CdS nanowires array on Cd foil: synthesis and optical properties
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DOI：
10.1016/j.matlet.2014.10.030
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发表时间：
2015-01
影响因子：
3
通讯作者：
Yong Li;Lei Gao;Yueli Song;Xi-Chang Xue;J. Pengfei;F. Zhou;Xinjian Li
中科院分区：
文献类型：
--
作者：
Yong Li;Lei Gao;Yueli Song;Xi-Chang Xue;J. Pengfei;F. Zhou;Xinjian Li
以Cd箔为Cd ~（2+）的前驱体，采用简单的溶剂热法在Cd箔上生长了均匀的CdS纳米线阵列。CdS纳米线垂直于Cd箔，呈（0 0 2）择优取向，直径约为2 0 ~ 40 nm，长度约为10-13 μm。利用Kubelka-Munk方法得到CdS纳米线阵列的光学带隙为~2.46 eV（~505 nm）。在420 nm激发下的绿色和红色发射分别归因于CdS纳米线的带隙发射和硫空位向价带的跃迁。这种有序排列的CdS纳米线阵列具有良好的光电应用前景。
A uniform CdS nanowires array is grown on the Cd foil through a simply solvothermal method using the Cd foil as the precursor of Cd2+and the substrate. The CdS nanowires are perpendicular to the Cd foil and show the preferred (0 0 2) orientation, which have the diameters of ~20–40 nm and lengths of ~10–13 μm. The optical band gap of ~2.46 eV (~505 nm) for CdS nanowires array is obtained by the Kubelka-Munk method. The green and red emissions under the excitation of 420 nm are ascribed to the band gap emission and the transition from the sulfur vacancies to the valence band of CdS nanowire, respectively. The well-aligned CdS nanowires array could be considered to be an excellent candidate for optoelectronic application.