Implementing Complex Oxides for Efficient Room‐Temperature Spin–Orbit Torque Switching
Implementing Complex Oxides for Efficient Room‐Temperature Spin–Orbit Torque Switching
复制标题
DOI：
10.1002/aelm.202200514
复制
发表时间：
2022-08
影响因子：
6.2
通讯作者：
A. Tang;Teng Xu;Shengsheng Liu;Yuhan Liang;Hetian Chen;Dayu Yan;Youguo Shi;Pu Yu;Rong Yu-Rong-Y
中科院分区：
文献类型：
--
作者：
A. Tang;Teng Xu;Shengsheng Liu;Yuhan Liang;Hetian Chen;Dayu Yan;Youguo Shi;Pu Yu;Rong Yu-Rong-Y
含有4d和5d阳离子的复合氧化物具有显著的自旋轨道耦合，最近被证明是有效的自旋电荷相互转换的有前途的材料。通过将4d和5d氧化物与磁体层相连接，获得了较大的自旋轨道转矩。然而，没有证明使用这些氧化物进行垂直磁化的室温SOT开关，这是自旋电子器件所必需的。在这里，通过研究由两种具有代表性的复合氧化物（4d SrRuO3和5d SrIrO3）和具有垂直磁各向异性的补偿铁磁体FeGd组成的异质结构来解决这一问题。在SrRuO3/FeGd和SrIrO3/FeGd双层中，室温电流诱导的垂直磁化SOT开关，临界开关电流密度约为106 A cm−2。利用谐波霍尔电压测量进一步量化了SrRuO3和SrIrO3的SOT效率。结果表明，强相关氧化物可能是另一个有希望实现高能效自旋轨道电子应用的平台。
Complex oxides hosting 4d and 5d cations with significant spin–orbit coupling have recently been shown as promising materials for efficient spin‐charge interconversion. Through interfacing 4d and 5d oxides with magnet layers, a large spin–orbit torque (SOT) is reported. However, a room‐temperature SOT switching of perpendicular magnetization by using these oxides, which is essential for spintronic devices, is not demonstrated. Here, this is addressed yet missing aspect by studying heterostructures comprised of two representative complex oxides (4d SrRuO3 and 5d SrIrO3) and a compensated ferrimagnet FeGd with perpendicular magnetic anisotropy. A room temperature current‐induced SOT switching of perpendicular magnetization in both SrRuO3/FeGd and SrIrO3/FeGd bilayers, with the critical switching current density on the order of 106 A cm−2 is demonstrated. The SOT efficiencies of SrRuO3 and SrIrO3 are further quantified by using harmonic Hall voltage measurements. The results suggest that the strongly correlated oxides could be another promising platform for enabling energy‐efficient spin‐orbitronic applications.