Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN
Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN
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DOI：
10.1063/1.5021306
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发表时间：
2018-04-09
影响因子：
4
通讯作者：
De Souza, Maria Merlyne
中科院分区：
文献类型：
--
作者：
Kumar, Ashwani;De Souza, Maria Merlyne
通过在栅氧化物与沟道之间使用AlGaN帽层来引入正极化电荷，是耗尽二维空穴气（2DHG）以实现增强型（E模式）p沟道氮化镓（GaN）金属 - 氧化物 - 半导体场效应晶体管（MOSHFET）的有前景技术之一。工艺计算机辅助设计（TCAD）模拟结果表明，在此结构中，对于厚度超过20纳米的沟道层，关态泄漏电流会增加几个数量级。对2DHG下方的二维电子气施加偏压有助于缓解这一限制，但代价是导通电流降低。缩小源漏区尺寸并结合这两种技术，能在导通态电流、负阈值电压以及通断电流比方面实现最大效益。由美国物理联合会（AIP）出版社出版。
Introduction of positive polarization charge by utilising an AlGaN cap layer between the gate oxide and the channel is one of the promising techniques to deplete a two-dimensional hole gas (2DHG) to achieve an E-mode p-channel GaN MOSHFET. The results from TCAD simulations indicate that the off-state leakage increases by orders of magnitude for channel layers thicker than 20 nm in this structure. Biasing the two-dimensional electron gas beneath the 2DHG helps alleviate this limitation at the cost of reducing on-current. Scaling the access regions and combining the two techniques allow maximum benefit in terms of on-state current, negative threshold voltage, and the on/off current ratio. Published by AIP Publishing.