Edge-Channel Transport of Dirac Fermions in Graphene Quantum Hall Junctions
Edge-Channel Transport of Dirac Fermions in Graphene Quantum Hall Junctions
复制标题
DOI：
10.7566/jpsj.84.121007
复制
发表时间：
2015-12-15
影响因子：
1.7
通讯作者：
Taniguchi, Takashi
中科院分区：
文献类型：
--
作者：
Machida, Tomoki;Morikawa, Sei;Taniguchi, Takashi
狄拉克费米子在石墨烯中表现出各种特征输运现象。特别是在强磁场中，狄拉克费米子的电子态被量子化到朗道能级，石墨烯表现出半整数量子霍尔效应。在这里，我们讨论了石墨烯量子霍尔结中的边缘沟道图像，并回顾了石墨烯平面单极和双极结中量子霍尔效应的实验。
Dirac fermions exhibit various characteristic transport phenomena in graphene. Particularly in high magnetic fields, the electronic states of Dirac fermions are quantized into Landau levels, and graphene shows a half-integer quantum Hall effect. Here, we discuss the edge-channel picture in graphene quantum Hall junctions and review experiments on the quantum Hall effect in graphene in-plane unipolar and bipolar junctions.