Magnetic properties of single‐crystal Fe films grown on ZnSe epilayers by molecular‐beam epitaxy
Magnetic properties of single‐crystal Fe films grown on ZnSe epilayers by molecular‐beam epitaxy
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DOI：
10.1063/1.338654
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发表时间：
1987-04
影响因子：
3.2
通讯作者：
J. Krebs;B. Jonker;G. A. Prinz
中科院分区：
文献类型：
--
作者：
J. Krebs;B. Jonker;G. A. Prinz
本文报道了在ZnSe（110）和（001）外延层上用分子束外延（MBE）生长的单晶α-Fe薄膜的磁性。这些ZnSe层通过MBE在具有（110）或（001）表面的GaAs衬底上生长，最终的ZnSe层保护Fe免受氧化。除了X射线荧光和通常的原位表面分析工具外，还通过振动样品磁力测定法和面内FMR对样品进行了表征。膜厚度范围为140至3100 A。这些薄膜的矫顽力显着小于直接在GaAs衬底上生长的类似薄膜和FMR线宽表明小得多的微波损耗。除了所研究的最薄的膜之外，4πM和K1（立方各向异性）值与体Fe相似。在较厚的（110）Fe/ZnSe和（110）Fe/GaAs薄膜中发现的单轴面内各向异性的起源归因于磁致伸缩和源自Fe/衬底界面的晶格失配引起的应变的组合。
We report the magnetic properties of single‐crystal α‐Fe films grown by molecular‐beam epitaxy (MBE) on both (110) and (001)ZnSe epilayers. These ZnSe layers were grown by MBE on GaAs substrates with (110) or (001) surfaces and a final ZnSe layer protected the Fe from oxidation. The samples were characterized by vibrating sample magnetometry and in‐plane FMR in addition to x‐ray fluorescence and the usual in situ surface analysis tools. Film thicknesses ranged from 140 to 3100 A. The coercive forces are significantly smaller for these films than for similar films grown directly on GaAs substrates and the FMR linewidths indicate much smaller microwave losses. Except for the thinnest film studied, the 4πM and K1 (cubic anisotropy) values are similar to bulk Fe. The origin of the uniaxial in‐plane anisotropy found in thicker (110)Fe/ZnSe and (110)Fe/GaAs films is attributed to the combination of magnetostriction and lattice mismatch‐induced strain originating at the Fe/substrate interface.