Simulation of metal-semiconductor-metal devices on heavily compensated Cd0.9Zn0.1Te
Simulation of metal-semiconductor-metal devices on heavily compensated Cd0.9Zn0.1Te
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DOI：
10.1063/1.4765027
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发表时间：
2012-11
影响因子：
3.2
通讯作者：
A. Ruzin
中科院分区：
文献类型：
--
作者：
A. Ruzin
This study focuses on finite-element calculations of the electrical properties of metal-semiconductor-metal devices processed on heavily compensated, high resistivity, Cd0.9Zn0.1Te crystals. Deep and shallow levels used in the calculations were taken from published experimental results. Several compensation configurations, yielding similar resistivities were investigated. The capture cross-sections of the deep traps were introduced as an additional parameter. It is shown that with pure-Ohmic contacts the characteristics of Metal-Semiconductor-Metal devices are similar to the non-compensated case. With Schottky contacts it is shown that the device characteristics greatly depend on the compensation level and on capture cross section, yielding anything from Ohmic-like behavior to Schottky-like characteristics. Furthermore, it is shown that Schottky contacts and rectifying I-V behavior do not imply classical Schottky electric field and space charge distributions.
