Force Spectroscopy on Semiconductor Surfaces
Force Spectroscopy on Semiconductor Surfaces
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DOI：
10.1007/978-3-642-01495-6_3
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发表时间：
2009-01-01
期刊：
影响因子：
--
通讯作者：
Sugimoto, Yoshiaki
中科院分区：
文献类型：
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作者：
Custance, Oscar;Oyabu, Noriaki;Sugimoto, Yoshiaki
在这一章中，我们介绍了使用频率调制检测方法进行的力光谱方面的最新工作，这些工作有助于扩大原子力显微镜(AFM)在研究具有原子分辨率的表面方面的知识和适用性。我们首先介绍了一些关于力谱获取的实验考虑。然后，我们讨论了结合力谱和第一性原理计算如何有助于清楚地确定悬臂振动的能量耗散通道，以及阐明原子弛豫和在异质半导体表面上检测到的尖端-表面短程相互作用的差异之间的相互作用。我们介绍了一种基于针尖-表面短程相互作用力的精确量化的原子力显微镜单原子化学识别方案。最后，展望了小悬臂梁振幅值的普遍应用，讨论了利用矩形悬臂梁的高弯曲模式和小至3.6埃的振幅值进行力谱采集的问题。
In this chapter, we introduce recent works on force spectroscopy performed using the frequency modulation detection method that have contributed to widen the knowledge and applicability of atomic force microscopy (AFM) for the study of surfaces with atomic resolution. We first introduce some experimental considerations regarding force spectroscopy acquisition. Then, we discuss how the combination force spectroscopy and first-principle calculations has contributed to clearly identify a channel for the dissipation of energy from the cantilever oscillation, as well as to clarify the interplay between atomic relaxations and differences in the tip-surface short-range interaction detected over atoms populating heterogeneous semiconductor Surfaces. We introduce a protocol for single-atom chemical identification using AFM, which is based on the precise quantification of the tip-surface short-range interaction forces. Finally, anticipating the future general use of small cantilever oscillation amplitudes, we discuss force spectroscopy acquisition using higher flexural modes of rectangular cantilevers and oscillation amplitude values as small as 3.6 angstrom.