Metal–insulator–semiconductor emitter with an epitaxial CaF2 layer as the insulator
Metal–insulator–semiconductor emitter with an epitaxial CaF2 layer as the insulator
复制标题
以外延 CaF2 层作为绝缘体的金属-绝缘体-半导体发射极
DOI：
10.1116/1.589918
复制
发表时间：
1998
期刊：
影响因子：
--
通讯作者：
M. Asada
中科院分区：
文献类型：
--
作者：
Y. Miyamoto;A. Yamaguchi;K. Oshima;W. Saitoh;M. Asada
在n+-Si衬底上生长了一层8 nm厚的CaF 2外延层，作为发射区面积为10 μm2的金属-绝缘体-半导体阴极的绝缘体。所制备的阴极表现出两种不同类型的I-V特性。第一种类型在发射极电流为2.4mA和发射极电压为7V时显示出22 pA的常规隧道发射电流。具有另一种类型特性的发射极在发射极电流为2.2mA和发射极电压为4.5V时显示出5.6nA的发射电流，但它显示出电流不稳定性。
An 8-nm-thick epitaxial CaF2 layer grown on an n+-Si substrate was used as the insulator in a metal–insulator–semiconductor cathode with a 10 μm2 emitter region. The fabricated cathodes exhibited two different types of I–V characteristics. The first type showed conventional tunnel emission current of 22 pA at an emitter current of 2.4 mA and an emitter voltage of 7 V. The emitter with the other type of characteristics showed an emission current of 5.6 nA at an emitter current of 2.2 mA and an emitter voltage of 4.5 V but it showed current instability.