Metalorganic Chemical Vapor Deposition of Epitaxial SrBi2Ta2O9 Thin Films and Their Crystal Structure
Metalorganic Chemical Vapor Deposition of Epitaxial SrBi2Ta2O9 Thin Films and Their Crystal Structure
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金属有机化学气相沉积外延SrBi2Ta2O9薄膜及其晶体结构
DOI：
10.1143/jjap.38.l258
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
H. Funakubo
中科院分区：
文献类型：
--
作者：
K. Ishikawa;N. Nukaga;H. Funakubo
以Bi（CH 3）3-Sr[Ta（O·C2 H5）6]2-O2为源，采用金属有机化学气相沉积法生长了SrBi 2 Ta 2 O 9（SBT）外延薄膜。在640 ℃和750 ℃下，SBT相和萤石相分别沉积在（100）SrTiO 3和（100）YSZ基片上，SBT相的c轴取向垂直于基片，萤石相的a轴取向垂直于基片。另一方面，当沉积温度高于640°C时，在（100）LaAlO 3衬底上沉积的薄膜由a轴取向的萤石相和c轴取向的SBT相组成。这些外延关系似乎与薄膜和衬底之间的晶体结构和晶格失配有关。
Epitaxial SrBi2Ta2O9 (SBT) thin films were grown by metalorganic chemical vapor deposition using Bi(CH3)3–Sr[Ta(O·C2H5)6]2–O2 sources. The SBT phase with the c-axis oriented normal to the substrate and the fluorite phase with its a-axis oriented normal to the substrate could be deposited onto (100)SrTiO3 and (100)yttria-stabilized zirconia (YSZ) substrates at 640 and 750°C, respectively. On the other hand, the films deposited onto (100)LaAlO3 substrates consisted of the a-axis oriented fluorite phase together with the c-axis oriented SBT phase when the deposition temperature was greater than 640°C. These epitaxial relationships appear to be related to the crystal structure and lattice mismatch between the film and substrate.