Temperature dependence of liquid Sn sputtering by low-energy He + and D + bombardment
Temperature dependence of liquid Sn sputtering by low-energy He + and D + bombardment
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低能 He 和 D 轰击液态 Sn 溅射的温度依赖性
DOI：
10.1016/j.jnucmat.2004.06.009
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发表时间：
2004
影响因子：
3.1
通讯作者：
D. Ruzic
中科院分区：
文献类型：
--
作者：
M. Coventry;J. Allain;D. Ruzic
测量了240 ~ 420 °C温度范围内低能氦和氘辐照液态锡的绝对溅射产额。对于离子能量范围从300到1000 eV，注意到液态锡溅射的温度增强。这些测量值是通过IIAX（离子表面相互作用实验）获得的，使用45°入射的速度过滤离子束将材料从液体锡靶溅射到沉积监测器上。在45°入射角下，500 eV离子轰击的溅射产额分别从室温下He+和D+离子的0.1±0.03和0.019±0.008 Sn粒子/离子增加到380 °C下的0.30±0.12和0.125±0.05 Sn粒子/离子。在使用离子束和等离子体照射的其他液体金属（即锂、锡-锂和镓）中已经看到温度增强溅射。
Absolute sputtering yields of liquid tin from 240 to 420 °C due to irradiation by low-energy helium and deuterium have been measured. For ion energies ranging from 300 to 1000 eV, temperature enhancement of liquid tin sputtering was noted. These measurements were obtained by IIAX (the Ion-surface InterAction eXperiment) using a velocity-filtered ion beam at 45° incidence to sputter material from a liquid tin target onto deposition monitors. Sputtering yields from 500 eV ion bombardment at 45° incidence increase from 0.1±0.03 and 0.019±0.008 Sn particles/ion at room temperature, for He+and D+ions respectively, to 0.30±0.12 and 0.125±0.05 Sn particles/ion for 380 °C. Temperature enhanced sputtering has been seen in other liquid metals (namely lithium, tin–lithium, and gallium) using both ion beam and plasma irradiation.