Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN
Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN
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DOI：
10.1063/1.1415048
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发表时间：
2001-10-29
影响因子：
4
通讯作者：
Lan, WH
中科院分区：
文献类型：
--
作者：
Horng, RH;Wuu, DS;Lan, WH
研究了Ni/铟锡氧化物（ITO）与p型GaN欧姆接触（近似2 × 10~（17）cm~（-3））的特性。分别采用热蒸发法和射频磁控溅射法制备了Ni/ITO（10 nm/250 nm）薄膜。虽然沉积态的Ni/ITO接触呈现整流行为，但可以获得线性的电流-电压特性。ITO/Ni/p-GaN样品经过适当的快速热处理后，接触电阻显著降低。ITO/Ni/p-GaN的接触特性显示出最低的比接触电阻率为8.6 × 10（-4）Ω cm（2），并且当样品在空气中在600 ℃退火时具有高的透明性（对于450 - 550 nm大于80%）。将讨论所观察到的低接触电阻和高透明度的可能机制。该工艺与高效GaN发光器件的制备兼容。(C)2001年美国物理学会。
The characteristics of Ni/indium tin oxide (ITO) ohmic contacts to p-type GaN (similar to 2x10(17) cm(-3)) have been studied. The Ni/ITO (10 nm/250 nm) layers were prepared by thermal evaporation and rf magnetron sputtering, respectively. Although the as-deposited Ni/ITO contacts present rectified behavior, the linear current-voltage characteristics can be obtained. The contact resistance can be reduced significantly for the ITO/Ni/p-GaN samples after suitable rapid thermal process. The contact property of ITO/Ni/p-GaN shows lowest specific contact resistivity of 8.6x10(-4) Omega cm(2) and high transparency (above 80% for 450-550 nm) as the sample annealed at 600 degreesC in air. Possible mechanisms for the observed low contact resistance and high transparency will be discussed. The present process is compatible with the fabrication for the high-efficient GaN light-emitting devices. (C) 2001 American Institute of Physics.