Formation of quasi-free-standing graphene on SiC(0001) through intercalation of erbium
Formation of quasi-free-standing graphene on SiC(0001) through intercalation of erbium
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DOI：
10.1063/9.0000154
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发表时间：
2021-02
期刊：
影响因子：
1.6
通讯作者：
P. Bentley;T. Bird;A. Graham;O. Fossberg;S. Tear;A. Pratt
中科院分区：
文献类型：
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作者：
P. Bentley;T. Bird;A. Graham;O. Fossberg;S. Tear;A. Pratt
使用具有高磁矩的元素活化4 H-和6 H-SiC衬底上的碳缓冲层可能导致新型石墨烯/SiC基自旋电子器件。在这项工作中，我们使用各种表面分析技术来探索Er在缓冲层下方的嵌入，显示了相关形成准独立石墨烯（QFSG）的证据。低能电子衍射（LEED），原子力显微镜（AFM），X-射线和紫外光电子能谱（XPS和UPS），和亚稳态去激发光谱（MDS）的数据的综合分析表明，退火温度高达1073 K导致沉积的Er簇在表面。结果表明，Er的嵌入发生在1273 K，导致碳缓冲层与SiC衬底之间的背键断裂，形成QFSG。在1473 K的进一步退火不会导致Er原子的解吸，但会导致表面的进一步石墨化。
Activation of the carbon buffer layer on 4H- and 6H-SiC substrates using elements with high magnetic moments may lead to novel graphene/SiC-based spintronic devices. In this work, we use a variety of surface analysis techniques to explore the intercalation of Er underneath the buffer layer showing evidence for the associated formation of quasi-free-standing graphene (QFSG). A combined analysis of low energy electron diffraction (LEED), atomic force microscopy (AFM), X-ray and ultraviolet photoemission spectroscopy (XPS and UPS), and metastable de-excitation spectroscopy (MDS) data reveals that annealing at temperatures up to 1073 K leads to deposited Er clustering at the surface. The data suggest that intercalation of Er occurs at 1273 K leading to the breaking of back-bonds between the carbon buffer layer and the underlying SiC substrate and the formation of QFSG. Further annealing at 1473 K does not lead to the desorption of Er atoms but does result in further graphitization of the surface.