X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN
X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN
复制标题
DOI：
10.1063/1.1573351
复制
发表时间：
2003-05-12
影响因子：
4
通讯作者：
Kuech, TF
中科院分区：
文献类型：
--
作者：
Rickert, KA;Ellis, AB;Kuech, TF
通过同步辐射光电子能谱研究了表面化学处理和金属沉积对InN表面的影响。In 4d芯能级的变化以及价带谱的报告。确定了Au和Ti肖特基势垒的表面费米能级位置E-F相对于价带最大值。对于沉积在退火InN上的Au，E-F位于价带最大值以上0.7 eV的能量处，对于沉积在Ar溅射InN上的Ti，E-F位于价带最大值以上1.2 eV的能量处。这些结果表明，当InN带隙为0.7-0.9 eV时，表面费米能级位于或高于导带最大值。(C)2003年，美国物理学会。
The effects of surface chemical treatments and metal deposition on the InN surface are studied via synchrotron-based photoemission spectroscopy. Changes in the In 4d core level as well as the valence band spectra are reported. The surface Fermi level position, E-F, relative to the valence band maximum was determined for both Au and Ti Schottky barriers. E-F lies at an energy of 0.7 eV above the valence band maximum for Au deposited on annealed InN and 1.2 eV above the valence band maximum for Ti deposited on Ar-sputtered InN. These results that the surface Fermi level lays at or above the conduction band maximum when a value of InN band gap of 0.7-0.9 eV is assumed. (C) 2003 American Institute of Physics.