Aligned growth of isolated single-walled carbon nanotubes programmed by atomic arrangement of substrate surface
Aligned growth of isolated single-walled carbon nanotubes programmed by atomic arrangement of substrate surface
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DOI：
10.1016/j.cplett.2005.04.054
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发表时间：
2005-06-17
影响因子：
2.8
通讯作者：
Tsuji, M
中科院分区：
文献类型：
--
作者：
Ago, H;Nakamura, K;Tsuji, M
通过催化化学气相沉积法，在蓝宝石（Al₂O₃）衬底的R面（I 10 2）和A面（1 12 0）上生长出了高度定向且孤立的单壁碳纳米管（SWNTs）。基于电子背散射衍射（EBSD）分析，我们发现单壁碳纳米管沿着与这些表面上铝原子的各向异性准一维阵列相对应的特定晶体方向排列。这表明，由于铝原子和纳米管之间的强相互作用，铝阵列引导了单壁碳纳米管的生长。另一方面，在C面（0 0 0 1）衬底上生长的单壁碳纳米管呈现出随机取向，这反映了铝原子的各向同性排列。这些发现表明，单壁碳纳米管与衬底表面之间的强相互作用可应用于纳米电子学应用中的单壁碳纳米管图案化或集成。（c）2005 Elsevier B.V. 保留所有权利。
Highly aligned and isolated single-walled carbon nanotubes (SWTs) were grown on the R-face (I 10 2) and A-face (1 12 0) surfaces of sapphire (Al2O3) substrates by catalytic chemical vapor deposition. On the basis of the electron backscatter diffraction (EBSD) analysis, we have found that the SWNTs are aligned along the specific crystalline directions corresponding to the anisotropic pseudo-one-dimensional array of Al atoms on these surfaces. This suggests that the Al array guides the SAINT growth due to the strong interaction between the Al atoms and nanotubes. On the other hand, a random orientation has been observed for the SWNTs grown on the C-face (0 0 0 1) substrate, reflecting the isotropic arrangement of Al atoms. These findings indicate that the strong interaction between the SWNTs and substrate surface is applicable for patterning or integrating SVvNTs in nanoelectronics applications. (c) 2005 Elsevier B.V. All rights reserved.