Design and Fabrication of a Novel Silicon Pressure/Temperature Microsensor
Design and Fabrication of a Novel Silicon Pressure/Temperature Microsensor
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发表时间：
2006
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通讯作者：
Lin Hui-wang
中科院分区：
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作者：
Lin Hui-wang
设计并制造了一种由压阻和热阻元件组成的新型微传感器。采用50μm厚的硅膜片，比传统压阻式压力传感器更厚，扩大了体硅中的高应力区域，增加了线性工作范围和爆破压力。采用优化的结构参数设计了新型曲折形状压敏电阻，部分压敏电阻在高应力体硅上制造，以获得高灵敏度。热敏电阻采用与压敏电阻相同的注入工艺在体硅上制造。获得了良好的温度线性和灵敏度，并且简化了制造。整个制造成本低、产量高且与标准IC工艺兼容。给出了主要测量结果。
A novel microsensor consisted of piezoresistive and thermal resistive components is designed and fabricated. A 50 μm thick silicon diaphragm is used, thicker than that of the conventional piezoresistive pressure sensor, which extends the high stress area in the bulk silicon, and increases the linear operating range as well as the burst pressure. Novel meandering shape piezoresistors are designed with optimized structure parameters, parts of which are fabricated on the high stress bulk silicon to obtain high sensitivity. The thermistors are fabricated on the bulk silicon with the same implantation process as the piezoresistors. Good temperature linearity and sensitivity are obtained, and the fabrication is simplified. The whole fabrication is low-cost, high yield and compatible with the standard IC process. Primary measured results are presented.