Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling
Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling
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DOI：
10.1016/j.physe.2019.113615
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发表时间：
2019-10-01
影响因子：
3.3
通讯作者：
Tanaka, Yukio
中科院分区：
文献类型：
--
作者：
Oshima, Daisuke;Taguchi, Katsuhisa;Tanaka, Yukio
计算了正常金属（NM）/二维电子气（2DEG）结中电荷电导与栅压（V-g）的关系，其中2DEG中存在Rashba自旋轨道耦合和铁磁性.我们称这种2DEG为铁磁Rashba金属（FRM），FRM的化学势由V-g控制。我们澄清了在我们以前的工作中发现的NM/FRM结中电荷电导的非常规V-g依赖性的物理起源[J. Phys. Soc. Jpn. 87，034710（2018）]，其中电荷电导随着V-g增加，尽管FRM中的载流子数量减少。我们计算了动量分辨的电荷电导。它澄清了非常规的V-g依赖性的起源是由于在FRM的内费米面的大小作为V-g的函数的非单调变化。
We calculate the gate voltage (V-g) dependence of charge conductance in a normal metal (NM)/two dimensional electron gas (2DEG) junction, where Rashba spin-orbit coupling and ferromagnetism exist in the 2DEG. We call this 2DEG as the ferromagnetic Rashba metal (FRM) and the chemical potential of the FRM is controlled by V-g. We clarify the physical origin of the unconventional V-g dependence of charge conductance in the NM/FRM junction found in our previous work [J. Phys. Soc. Jpn. 87, 034710 (2018)], in which the charge conductance increases with V-g, although the number of carries in FRM decreases. We calculate the momentum-resolved charge conductance. It is clarified that the origin of the unconventional V-g dependence is due to the nonmonotonic change in the size of the inner Fermi surface in FRM as a function of V-g.