Strong interaction between ferroelectric polarization and oxygen vacancy in BiFeO3 thin film capacitors
Strong interaction between ferroelectric polarization and oxygen vacancy in BiFeO3 thin film capacitors
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DOI：
10.2109/jcersj2.15296
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发表时间：
2016-06
影响因子：
1.1
通讯作者：
Hiroki Matsuo;Y. Kitanaka;Y. Noguchi;M. Miyayama
中科院分区：
文献类型：
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作者：
Hiroki Matsuo;Y. Kitanaka;Y. Noguchi;M. Miyayama
研究了氧空位（VO（cid：129））分布对SrRuO 3（SRO）/ BiFeO 3（BFO）/ SRO电容器极化性能的影响。我们的薄膜实验和密度泛函理论（DFT）计算表明，VO（cid：129）（cid：129）和BFO / SRO底界面之间的强吸引相互作用导致了沉积态电容器中富含VO（cid：129）（cid：129）的缺陷层。富含V O（cid：129）（cid：129）层的分布逐渐被电训练打破，最终变得对称，导致极化滞后从明显的圆形变化为典型的铁电环。该研究表明，利用V O（cid：129）（cid：129）的缺陷工程是控制电容器形式的BFO的极化相关性质的有效方法。
In fl uence of oxygen vacancy ( V O (cid:129)(cid:129) ) distribution on the polarization properties of SrRuO 3 (SRO) / BiFeO 3 (BFO) / SRO capacitors was investigated. Our thin- fi lm experiments and density function theory (DFT) calculations reveal that a strong attractive interaction between V O (cid:129)(cid:129) and the bottom BFO / SRO interface gives rise to an V O (cid:129)(cid:129) -rich defective layer for as-deposited capacitors. The distribution with the V O (cid:129)(cid:129) -rich layer is gradually broken by an electrical training and fi nally becomes symmetric, leading to a polarization-hysteresis change from a markedly rounded to a typical ferroelectric loop. This study demonstrates that defect engineering utilizing V O (cid:129)(cid:129) is an effective approach to control the polarization-related properties of BFO in capacitor form.