Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
复制标题
具有硅化源极/漏极和场致漏极扩展的肖特基势垒薄膜晶体管 (SBTFT)
DOI：
10.1109/55.915606
复制
发表时间：
2001
影响因子：
4.9
通讯作者：
T. Huang
中科院分区：
文献类型：
--
作者：
H. Lin;K. Yeh;R. Huang;C. Lin;T. Huang
提出并演示了一种具有硅化源极/漏极和场致漏极（FID）扩展的新型肖特基势垒薄膜晶体管（SBTFT）。在新的器件配置中，采用位于钝化氧化物上的金属场板（或子栅极）来在位于硅化漏极和主栅极下方的有源沟道区域之间的沟道偏移区域中感应载流子片。因此，新器件只需切换施加到场板的偏压的极性即可实现双极器件操作。与遭受高 GIDL（栅致漏极泄漏）类断态漏电流的传统 SBTFT 相比，具有 FID 的新型 SBTFT 基本上没有类 GIDL 漏电流。此外，与传统 SBTFT 的开关电流比较低不同，新器件在 n 沟道和 p 沟道工作模式下均表现出高达 10/sup 6/ 的高开关电流比。此外，新器件的无植入特性和双极能力还导致 CMOS 工艺集成的掩模数量极少。这些优异的器件特性，加上其简单的加工，使得该新器件在未来的大面积电子应用中非常有前景。
A novel Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain (FID) extension is proposed and demonstrated. In the new device configuration, a metal field-plate (or sub-gate) lying on the passivation oxide is employed to induce a sheet of carriers in a channel offset region located between the silicided drain and the active channel region underneath the main gate. The new device thus allows ambipolar device operation by simply switching the polarity of the bias applied to the field plate. In contrast to the conventional SBTFT that suffers from high GIDL (gate-induced drain leakage)-like off-state leakage current, the new SBTFT with FID is essentially free from the GIDL-like leakage current. In addition, unlike the conventional SBTFT that suffers from low on-off current ratio, the new device exhibits high on/off current ratio up to 10/sup 6/ for both n- and p-channel modes of operation. Moreover, the implantless feature and the ambipolar capability of the new device also result in extra low mask count for CMOS process integration. These excellent device characteristics, coupled with its simple processing, make the new device very promising for future large-area electronic applications.