Nano structure Ti-doped skutterudite CoSb3 thin films through layer inter-diffusion for enhanced thermoelectric properties
Nano structure Ti-doped skutterudite CoSb3 thin films through layer inter-diffusion for enhanced thermoelectric properties
复制标题
纳米结构钛掺杂方钴矿CoSb3薄膜通过层间扩散增强热电性能
DOI：
10.1016/j.jeurceramsoc.2019.06.044
复制
发表时间：
2019-12-01
影响因子：
5.7
通讯作者：
Fan, Ping
中科院分区：
文献类型：
--
作者：
Liang, Guang-xing;Zheng, Zhuang-hao;Fan, Ping
通过层间扩散法制备了Ti掺杂的CoSb₃薄膜，所制备的薄膜具有独特的结构，包含纳米尺寸的晶粒。根据拉曼分析，Ti掺杂后薄膜的原子振动减弱。这种纳米结构和微弱的原子振动能够散射宽范围的声子谱，导致热导率显著降低。此外，这种材料设计还使绝对塞贝克系数值得到了非常重要的提高，从约50 μV K⁻¹增加到超过100 μV K⁻¹。结果，Ti掺杂样品在523 K时的最大ZT值为0.86，比未掺杂样品高6倍，与基于CoSb₃的薄膜的最佳值相当。还制造了一种基于CoSb₃的柔性薄膜热电发电机，结果表明所有触摸事件的响应时间均低于1秒。
Ti-doped CoSb3 thin films were prepared through layer inter-diffusion method and the prepared thin films have unique architecture, containing nano-size grains. According to the Raman analysis, the films have weaker atomic vibration after Ti doping. This nano-structure and the weak atomic vibration can scatter a wide-range spectrum of phonons, resulting the significantly decrease of thermal conductivity. In addition, this material design also leads to a very important improvement of the absolute Seeback coefficient value, which increases from about 50 mu VK-1 to over 100 mu NK-1. As the result, the maximum ZT value is 0.86 at 523 K for a Ti doped sample, which is six times higher than the un-doped sample and is comparable to the best value for the CoSb3 based thin films. A flexible CoSb3 based thin film thermoelectric generator was also fabricated and shows that the response time of all the touch events is below 1 s.