Analyzing voltage bias and temperature induced aging effects in photonic interconnects for manycore computing
Analyzing voltage bias and temperature induced aging effects in photonic interconnects for manycore computing
复制标题
分析多核计算光子互连中的电压偏置和温度引起的老化效应
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
S. Pasricha
中科院分区：
文献类型：
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作者：
Sai Vineel Reddy Chittamuru;Ishan G. Thakkar;S. Pasricha
硅光子互连正被考虑用于集成在未来的片上网络（NoC）中，因为它们可以以光速实现更高的带宽和更低的延迟数据传输。这种光子互连由用于信号穿越的具有密集波分复用（DWDM）的光子波导和用于信号调制和检测的微谐振器（MR）组成。为了使MR能够调制和检测DWDM光子信号，通过其电压偏置在MR中注入载流子是必不可少的。但是MR在恒定或时变温度和电压偏置下的长期操作会导致老化。MR中的这种电压偏置温度诱导（VBTI）老化导致谐振波长漂移和Q因子退化，这增加了利用光子互连的光子NoC（PNoC）中的信号损耗和能量延迟积。本文探讨了VBTI老化的MR，并首次展示了其对PNoC架构的影响。我们在两个PNoC架构上的系统级实验结果表明，VBTI老化使这些架构中的信号损耗增加了7.6dB，并在5年的时间内使EDP增加了26.8%。
Silicon photonic interconnects are being considered for integration in future networks-on-chip (NoCs) as they can enable higher bandwidth and lower latency data transfers at the speed of light. Such photonic interconnects consist of photonic waveguides with dense-wavelength-division-multiplexing (DWDM) for signal traversal and microring resonators (MRs) for signal modulation and detection. To enable MRs to modulate and detect DWDM photonic signals, carrier injection in MRs through their voltage biasing is essential. But long-term operation of MRs with constant or time-varying temperature and voltage biasing causes aging. Such voltage bias temperature induced (VBTI) aging in MRs leads to resonance wavelength drifts and Q-factor degradation, which increases signal loss and energy delay product in photonic NoCs (PNoCs) that utilize photonic interconnects. This paper explores VBTI aging in MRs and demonstrates its impacts on PNoC architectures for the first time. Our system-level experimental results on two PNoC architectures indicate that VBTI aging increases signal loss in these architectures by up to 7.6dB and increases EDP by up to 26.8% over a span of 5 years.