Selective Growth of Straight Carbon Nanotubes by Low-Pressure Thermal Chemical Vapor Deposition
Selective Growth of Straight Carbon Nanotubes by Low-Pressure Thermal Chemical Vapor Deposition
复制标题
低压热化学气相沉积选择性生长直碳纳米管
DOI：
10.1143/jjap.43.860
复制
发表时间：
2004
影响因子：
1.5
通讯作者：
S. Hasegawa
中科院分区：
文献类型：
--
作者：
T. Ikuno;M. Katayama;Norihiro Yamauchi;W. Wongwiriyapan;S. Honda;K. Oura;R. Hobara;S. Hasegawa
采用低压热化学气相沉积法以纯乙烯为原料制备了碳纳米管。结果表明，在100 Pa的低压下，由成束的单壁或双壁碳纳米管和多壁碳纳米管组成的直碳纳米管优先桥接在Fe纳米颗粒之间。此外，利用这种方法，我们试图在图案化的Ta电极之间生长CNT桥。通过氮化钽电极的表面，有效地形成具有中等尺寸的铁纳米颗粒，导致在电极之间桥接碳纳米管。
Carbon nanotubes (CNTs) were grown by low-pressure thermal chemical vapor deposition using pure ethylene. It was found that straight CNTs, which were composed of bundled single- or double-wall CNTs and multiwall CNTs, were preferentially bridged between Fe nanoparticles under a low pressure of 100 Pa. Moreover, utilizing this method, we attempted to grow CNT bridges between patterned Ta electrodes. By nitriding the surface of the Ta electrodes, Fe nanoparticles with a moderate size were effectively formed, resulting in bridging CNTs between the electrodes.