Multi-energy detection using CdZnTe semiconductor detectors
Multi-energy detection using CdZnTe semiconductor detectors
复制标题
使用 CdZnTe 半导体探测器进行多能量探测
DOI：
10.1109/nssmic.2008.4775200
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Nan Yao
中科院分区：
文献类型：
--
作者：
Lan Zhang;Yuanjing Li;Xiaocui Zheng;Zhi Deng;Weibin Zhu;Nan Yao
CdZnTe半导体探测器已广泛应用于辐射探测、空间物理、医学成像系统和安全检查领域。为了提高成像质量并提供物质识别，通常需要双能量和多能量检测技术。这里我们提供了CdZnTe多能量检测技术。微带阳极沿X射线入射方向被分成几段。这些不同的电极段被用作不同的能量检测区域，从低能量区域到高能量区域。在这种接触几何结构下可以获得多能量信息，同时CdZnTe探测器的探测效率可以通过增加探测器尺寸而不是厚度来提高。因此电荷收集效率和工作电压将保持不变。该技术还将解决传统双能固体探测器低能探测器太薄而无法制造的问题。根据不同能量X射线CdZnTe探测器中能量沉积分布的模拟结果，可以进行不同能量区域的数据校正。本文提供了多能量检测技术的细节。
The CdZnTe semiconductor detectors have been widely applied in radiation detection, space physics, medical imaging systems and security inspection field. In order to improve the imaging quality and to provide material identification, dual energy and multi-energy detection technology are often necessary. Here we provide a CdZnTe multi-energy detection technology. Micro-strip anode are separated to several segments along the X ray incidence direction. These different segments of electrodes are used as different energy detection regions, from low energy regions to high energy regions. Under this contact geometry the multi-energy information could be obtained, at the same time the detection efficiency of CdZnTe detectors could be improved by the increase of the detector size, not the thickness. So the charge collection efficiency and the operation voltage would be kept invariable. This technology will also solve the problem that the low energy detector is too thin to fabricate for traditional dual energy solid detectors. The data correction in different energy regions could be performed according to the simulation results of the energy deposition distribution in CdZnTe detectors of different energy X rays. This paper provides the details of the multi-energy detection technology.