Reversible tuning of lattice strain in epitaxial SrTiO3/La0.7Sr0.3MnO3 thin films by converse piezoelectric effect of 0.72Pb(Mg1/3Nb2/3)O3−0.28 PbTiO3 substrate
Reversible tuning of lattice strain in epitaxial SrTiO3/La0.7Sr0.3MnO3 thin films by converse piezoelectric effect of 0.72Pb(Mg1/3Nb2/3)O3−0.28 PbTiO3 substrate
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DOI：
10.1063/1.2838216
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发表时间：
2008-03
影响因子：
3.2
通讯作者：
A. Levin;A. I. Pommrich;T. Weissbach;D. Meyer;O. Bilani-Zeneli
中科院分区：
文献类型：
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作者：
A. Levin;A. I. Pommrich;T. Weissbach;D. Meyer;O. Bilani-Zeneli
在（001）Pb（Mg 1/3 Nb 2/3）O3−28 mol % PbTiO 3压电单晶片上外延生长了30 nm厚的SrTiO 3/La0.7Sr0.3MnO3（STO/LSMO）薄膜，并在强度E高达±18 kV/cm的直流电场的影响下通过广角X射线散射原位研究了该薄膜。由于衬底的匡威压电效应，薄膜中的应变可以动态调节。电场诱导的应变改变的基板和缓冲膜（LSMO）之间的耦合系数约为0.75，而对于基板和顶膜（STO），它是约0.35相关的归一化应变改变的基板1。
Thin SrTiO3/La0.7Sr0.3MnO3 (STO/LSMO) films of 30 nm thickness were epitaxially grown on a (001) Pb(Mg1/3Nb2/3)O3−28 mol % PbTiO3 piezoelectric single-crystalline plate and investigated by means of wide-angle x-ray scattering in situ under the influence of a direct current electric field with strength E up to ±18 kV/cm. The strain s in the films could by tuned dynamically due to a dominant converse piezoelectric effect of the substrate. The coefficient of coupling between electric field-induced strain alteration of the substrate and the buffer film (LSMO) is approximately 0.75, whereas for the substrate and top films (STO) it is about 0.35 related to a normalized strain alteration of the substrate of 1.