Porous Silicon-Based Quantum Dot Broad Spectrum Radiation Detector.
Porous Silicon-Based Quantum Dot Broad Spectrum Radiation Detector.
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多孔硅基量子点广谱辐射探测器。
DOI：
10.1088/1748-0221/6/01/c01027
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Brock,S
中科院分区：
文献类型：
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作者：
Urdaneta,M;Stepanov,P;Weinberg,IN;Pala,IR;Brock,S
硅是一种方便且廉价的辐射检测平台，但对高能 X 射线和伽马射线的阻止能力较低（例如，计算机断层扫描和数字射线照相中使用的 100 keV，或核材料检测所需的 1 MeV）。我们通过生产多孔或微加工硅层，并在该层中注入由电子致密材料制成的半导体量子点，有效地提高了硅探测器的阻止能力。原型探测器的结果显示对红外、可见光和 X 射线的敏感性，暗电流小于 1 nA/mm 2。
Silicon is a convenient and inexpensive platform for radiation detection, but has low stopping power for x-rays and gamma-rays with high energy (eg, 100 keV, as used in computed tomography and digital radiography, or 1 MeV as desired for detection of nuclear materials). We have effectively increased the stopping power of silicon detectors, by producing layers of porous or micro-machined silicon, and infusing this layer with semiconductor quantum dots made of electron-dense materials. Results of prototype detectors show sensitivity to infrared, visible light, and x-rays, with dark current of less than 1 nA/mm 2.