Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation
Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation
复制标题
带间光激发下光载流子对高电子迁移率晶体管太赫兹等离子体波谐振的调制效应
DOI：
10.1143/jjap.44.3842
复制
发表时间：
2005
影响因子：
1.5
通讯作者：
V. Ryzhii
中科院分区：
文献类型：
--
作者：
M. Hanabe;T. Otsuji;T. Ishibashi;T. Uno;V. Ryzhii
高电子迁移率晶体管（HEMT）的亚微米沟道中的二维（2-D）电子等离子体被带间光激发激发，导致执行光混频功能。注入的光电子调制总的2-D电子密度，影响等离子体共振特性。光电子对二维电子密度的调制深度与共振强度和共振频率密切相关，这种影响在二维等离子体流体力学方程中得到了解析描述。为了验证分析计算，在太赫兹范围内，实验观察到0.15 μm栅长InGaP/InGaAs/GaAs赝晶HEMT的等离子体波共振。在30%的调制深度处，清楚地观察到具有双峰的共振（在1.9/5.8THz处的峰对应于基波/三次谐波共振）。随着调制深度的减小，谐振频率略有下移，强度衰减。观察到的共振频率支持分析计算。
Two-dimensional (2-D) electron plasma in a submicron channel of a high-electron mobility transistor (HEMT) is excited by interband photoexcitation, resulting in performing the photomixing function. The injected photoelectrons modulate the total 2-D electron density, affecting the plasma resonant properties. The modulation depth of the density of 2-D electrons by the photoelectrons deeply relates to the resonant intensity and fr. This effect was modeled analytically in the 2-D plasma hydrodynamic equation. In order to validate the analytical calculation, the plasma-wave resonance was experimentally observed for a 0.15-µm gate-length InGaP/InGaAs/GaAs pseudomorphic HEMT in the terahertz range. At the modulation depth of 30%, the resonance was clearly observed with a double peak (the peak at 1.9/5.8 THz corresponding to the fundamental/third harmonic resonance). The resonant frequencies slightly shifted downward and the intensity attenuated with decreasing the modulation depth. Observed resonant frequencies support the analytical calculation.