Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate
Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate
复制标题
高织构衬底上多晶硅光伏层中的载流子传输
DOI：
10.1143/jjap.42.6753
复制
发表时间：
2003
影响因子：
1.5
通讯作者：
Y. Hamakawa
中科院分区：
文献类型：
--
作者：
R. Muhida;T. Kawamura;Tomokazu Harano;M. Okajima;T. Matsui;T. Toyama;H. Okamoto;S. Honda;H. Takakura;Y. Hamakawa
采用交流电导测量技术研究了等离子体增强化学气相沉积在不同织构衬底上沉积的非掺杂多晶硅薄膜沿生长方向的电导率。电子和空穴电导的温度依赖关系表明，在具有温和织构的衬底上，多晶硅的费米能级位于带隙的中心，这种材料是真正的本征材料。另一方面，即使在不改变多晶硅的沉积条件的情况下，高织构衬底上的多晶硅仍具有n型特性。电学性质的变化是由结构变化引起的，尤其是多晶硅在高织构衬底上(220)晶面择优取向程度的降低。此外，从载流子的电场依赖输运和收集的结果出发，对在织构衬底上制备的多晶硅PIN薄膜太阳电池的光伏性能进行了研究和讨论。
Electrical conductivities along the growth direction of undoped polycrystalline silicon (poly-Si) thin films deposited by plasma enhanced chemical vapor deposition on various textured substrates aiming for enhancing light trapping have been investigated using an AC conductivity measurement technique. Temperature dependence of electron and hole conductivities reveals that the Fermi level of poly-Si on the mildly textured substrates is located at the center of the band gap and this material is 'truly' intrinsic. On the other hand, poly-Si on the highly textured substrate exhibits n-type characteristic even though none of the deposition conditions for poly-Si is changed. The change in the electrical properties is induced by structural changes, especially the reduction in the degree of (220) crystallographic preferential orientation of poly-Si on highly textured substrates. Furthermore, photovoltaic performances of the poly-Si pin thin film solar cells fabricated on the textured substrates have been investigated and discussed from the result of electric-field-dependent carrier transport and collection.