Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2
Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2
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DOI：
10.1103/physrevb.90.220512
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发表时间：
2014-12-22
影响因子：
3.7
通讯作者：
Yokoya, Takayoshi
中科院分区：
文献类型：
--
作者：
Terashima, Kensei;Sonoyama, Junki;Yokoya, Takayoshi
用角分辨光电子能谱(ARPES)研究了近最佳掺杂的新型超导体LaO1-xFxBiS2(x=0.46)的电子结构。我们清楚地观察到在费米能级(E-F)附近从2到6 eV的能带色散，当考虑到自旋-轨道耦合时，这在第一性原理计算中得到了很好的再现。在E-F附近的ARPES强度图显示了在Gamma(Z)点附近的正方形分布，以及在X(R)点周围的类电子费米面(FS)，表明LaO0.54F0.46BiS2的FS与理论预测的拓扑变化非常接近。
The electronic structure of nearly optimally doped novel superconductor LaO1-xFxBiS2(x = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (E-F), which are well reproduced by first-principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near E-F shows a squarelike distribution around the Gamma(Z) point in addition to electronlike Fermi-surface (FS) sheets around the X(R) point, indicating that FS of LaO0.54F0.46BiS2 is in close proximity to the theoretically predicted topological change.