Application of CL/EBIC-SEM Techniques for Characterization of Radiation Effects in Multijunction Solar Cells
Application of CL/EBIC-SEM Techniques for Characterization of Radiation Effects in Multijunction Solar Cells
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DOI：
10.1109/tns.2010.2083691
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发表时间：
2010-12
影响因子：
1.8
通讯作者：
S. Maximenko;S. Messenger;C. Cress;J. A. Freitas;R. Walters
中科院分区：
文献类型：
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作者：
S. Maximenko;S. Messenger;C. Cress;J. A. Freitas;R. Walters
我们报告的辐照InGaP 2/GaAs/Ge多结（MJ）太阳能电池使用阴极发光（CL）成像/光谱和电子束感生电流（EBIC）模式的扫描电子显微镜（SEM）的表征结果。应用这些技术来验证辐照损伤对单片MJ结构中每个子电池的光电特性的影响，并将它们与照射（AM 0，1个太阳，25°C）电流-电压（I-V）和量子效率（QE）测量相关联。从CL测量的少数载流子寿命退化数据证实，GaAs子电池占主导地位的3 J设备的整体退化。此外，EBIC/CL测量揭示了GaAs子电池中的载流子去除机制。
We report the results of the characterization of irradiated InGaP2/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of irradiation damage on the optoelectronic properties of each subcell in the monolithic MJ structure and correlate them with the illuminated (AM0, 1 sun, 25°C) current-voltage (I-V) and quantum efficiency (QE) measurements. Minority carrier lifetime degradation data from CL measurements confirm that the GaAs subcell dominates the overall degradation of the 3J device. Also, a carrier removal mechanism in the GaAs subcell was revealed from the EBIC/CL measurements.