Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing
Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing
复制标题
DOI：
10.1063/1.4821068
复制
发表时间：
2013-09-09
影响因子：
4
通讯作者：
Yamamura, Kazuya
中科院分区：
文献类型：
--
作者：
Deng, Hui;Endo, Katsuyoshi;Yamamura, Kazuya
Thermal oxidation (TO) and abrasive polishing were combined for atomic-scale planarization of 4H-SiC. It was found that the oxide/SiC interface was atomically flat regardless of the thickness of the oxide. The specimen prepared by TO was dipped in HF solution to remove the oxide. However, owing to the residual silicon oxycarbide (Si-C-O), the step/terrace structure of 4H-SiC could not be observed. Nanoindentation tests revealed that the hardness of Si-C-O was much lower than that of SiC. A thermally oxidized SiC surface was polished using CeO2 abrasives, which resulted in an atomically flat surface with a well-ordered two-bilayer step/terrace structure. (C) 2013 AIP Publishing LLC.
