Doping Mechanisms of Sn in In2O3 Powder Studied Using 119Sn Mössbauer Spectroscopy and X-Ray Diffraction
Doping Mechanisms of Sn in In2O3 Powder Studied Using 119Sn Mössbauer Spectroscopy and X-Ray Diffraction
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使用 119Sn 穆斯堡尔谱和 X 射线衍射研究 In2O3 粉末中 Sn 的掺杂机制
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
Y. Nomura
中科院分区：
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作者：
N. Yamada;I. Yasui;YuzoShigesato Li;Y. Nomura
利用119 Sn透射穆斯堡尔谱（TMS）和X射线衍射（XRD）研究了Sn在In 2 O3（ITO）粉体中的掺杂机理。TMS谱的解卷积分析表明，掺杂浓度大于5at.%时，Sn ~（4+）不仅与6个氧原子[SnIn·]配位，而且与7或8个氧原子配位。这种电失活的Sn 4+（配位数为7或8）的量随着掺杂浓度的增加而增加，这在定量上与掺杂效率的降低一致。精确的XRD分析表明，随着掺杂浓度从0.5原子%增加到7原子%，晶格常数系统地增加。晶格常数的增加被解释为四价[SnIn·]（配位数为6）与比In 3+更高的有效电荷之间的排斥力，这也与通过TMS分析获得的Sn 4+的配位结果一致。
The doping mechanism of Sn in In2O3 (ITO) powder was investigated using 119Sn transmission Mössbauer spectroscopy (TMS) and X-ray diffraction (XRD) in view of the chemical state of Sn. Deconvolution analyses of TMS spectra revealed that there was substitutional Sn4+ coordinated not only by 6 oxygen atoms [SnIn·] but also by 7 or 8 oxygen atoms, for the samples with doping concentrations higher than 5 at.%. The amount of such electrically deactivated Sn4+ (coordination number of 7 or 8) increased with increasing doping concentration, which was quantitatively consistent with the decrease in doping efficiency. Precise XRD analyses indicated a systematic increase in the lattice constant with increasing doping concentration from 0.5 to 7 at.%. The increase in lattice constant was explained in terms of a repulsive force among tetravalent [SnIn·] (coordination number of 6) with higher effective charge than In3+, which was also consistent with the results on the coordination of Sn4+ obtained through TMS analyses.