Voltage control of ferrimagnetic order and voltage-assisted writing of ferrimagnetic spin textures
Voltage control of ferrimagnetic order and voltage-assisted writing of ferrimagnetic spin textures
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DOI：
10.1038/s41565-021-00940-1
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发表时间：
2021-07-29
影响因子：
38.3
通讯作者：
Beach, Geoffrey S. D.
中科院分区：
文献类型：
--
作者：
Huang, Mantao;Hasan, Muhammad Usama;Beach, Geoffrey S. D.
磁序的电压控制是自旋电子器件应用所需要的，但180度的磁化开关并不简单，因为电场不会破坏时间反转对称性。铁磁体由于具有不同大小的相反磁矩的多亚晶格结构，是180度转换的有希望的候选者。本研究采用固态氢门控技术动态控制稀土过渡金属薄膜中的铁磁有序。电场诱导氢在GdCo中加载/卸载可以使磁补偿温度偏移100 K以上，从而实现对主导磁亚晶格的控制。x射线磁圆二色性测量和从头计算表明，磁化控制源于反铁磁交换耦合的减弱，氢化后Gd的磁化强度比Co的磁化强度更低。我们观察到在没有外加磁场的情况下，栅极电压诱导的可逆净磁化开关和完全180度的尼尔矢量反转。此外，我们还通过氢门控在赛道器件中生成了手性畴壁和skyrmions等铁磁自旋纹理。该方法的门控时间短至50 μ s，持续时间超过10,000次，为调整亚铁磁自旋织构和动力学提供了强有力的手段，在快速发展的亚铁磁自旋电子学领域具有广泛的适用性。磁序电压控制是实现高效节能自旋电子学应用的关键之一。使用固态氢泵的电压门控现在允许可逆控制铁磁顺序，无外场180度磁开关和铁磁自旋织体写入。
Voltage control of magnetic order is desirable for spintronic device applications, but 180 degrees magnetization switching is not straightforward because electric fields do not break time-reversal symmetry. Ferrimagnets are promising candidates for 180 degrees switching owing to a multi-sublattice configuration with opposing magnetic moments of different magnitudes. In this study we used solid-state hydrogen gating to control the ferrimagnetic order in rare earth-transition metal thin films dynamically. Electric field-induced hydrogen loading/unloading in GdCo can shift the magnetic compensation temperature by more than 100 K, which enables control of the dominant magnetic sublattice. X-ray magnetic circular dichroism measurements and ab initio calculations indicate that the magnetization control originates from the weakening of antiferromagnetic exchange coupling that reduces the magnetization of Gd more than that of Co upon hydrogenation. We observed reversible, gate voltage-induced net magnetization switching and full 180 degrees Neel vector reversal in the absence of external magnetic fields. Furthermore, we generated ferrimagnetic spin textures, such as chiral domain walls and skyrmions, in racetrack devices through hydrogen gating. With gating times as short as 50 mu s and endurance of more than 10,000 cycles, our method provides a powerful means to tune ferrimagnetic spin textures and dynamics, with broad applicability in the rapidly emerging field of ferrimagnetic spintronics.Voltage control of magnetic order is one of the keys to energy-efficient spintronic applications. Voltage gating using a solid-state hydrogen pump now allows for reversible control of ferrimagnetic order, external-field-free 180 degrees magnetic switching and ferrimagnetic spin texture writing.