Electrode Dependences of Switching Endurance Properties of Lead-Zirconate-Titanate Thin-Film Capacitors
Electrode Dependences of Switching Endurance Properties of Lead-Zirconate-Titanate Thin-Film Capacitors
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DOI：
10.1143/jjap.35.2210
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发表时间：
1996-04
影响因子：
1.5
通讯作者：
K. Aoki;Y. Fukuda;Ken Numata Ken Numata-Ken-Numata;Akitoshi Nishimura Akitoshi Nishimura-Akitoshi-Nishimura
中科院分区：
文献类型：
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作者：
K. Aoki;Y. Fukuda;Ken Numata Ken Numata-Ken-Numata;Akitoshi Nishimura Akitoshi Nishimura-Akitoshi-Nishimura
采用脉冲开关特性测试技术研究了金、铂、铱顶电极锆钛酸铅薄膜电容器的开关耐久性能。与Au/PZT/Ir和Pt/PZT/Ir电容器相比，用Ir顶部和底部电极形成的锆钛酸铅电容器结构表现出上级开关耐久性。在2×109个开关周期后，由双极脉冲反转的Ir/PZT/Ir电容器的开关和非开关极化之间的差异超过38 µ C/cm 2。该电容器的非开关极化负读脉冲逐渐减少，随着开关周期数的增加。在Pt/PZT/Ir和Ir/PZT/Ir电容器的上电极施加正、负单极脉冲和直流偏压时，各电容器的反射极化没有明显变化。然而，非切换的负读脉冲的极化减少的负单极脉冲施加或直流偏置应用时间的数量的增加。Pt/PZT/Ir电容器的反向极化的急剧下降仅由双极脉冲应用引起。负读脉冲的非切换极化的减少表明在顶部电极和PZT层之间的界面处形成了耗尽层电容。
Switching endurance properties of lead-zirconate-titanate thin-film capacitors with gold, platinum and iridium top electrodes were investigated using a pulse switching characterization technique. Lead-zirconate-titanate capacitor structure formed with Ir top and bottom electrodes exhibited superior switching endurance to Au/PZT/Ir and Pt/PZT/Ir capacitors. The difference between switched and nonswitched polarizations of an Ir/PZT/Ir capacitor reversed by bipolar pulses was more than 38 µ C/ cm2 after 2×109 switching cycles. Nonswitched polarization of this capacitor for negative read-pulses decreased gradually with increase in the number of switching cycles. When positive and negative unipolar pulses, and DC biases were applied to the top electrodes of Pt/PZT/Ir and Ir/PZT/Ir capacitors, remanent polarizations of each capacitor were not changed significantly. However, nonswitched polarizations for negative read-pulses decreased with increase in the number of negative unipolar pulses applied or DC bias application time. Drastic decrease in remanent polarization of a Pt/PZT/Ir capacitor was caused only by bipolar pulse application. The reduction of nonswitched polarization for negative read-pulses suggested the formation of depletion-layer capacitances at the interfaces between top electrodes and PZT layers.