Dominant Substrate Noise Coupling Mechanism for Multiple Switching Gates
Dominant Substrate Noise Coupling Mechanism for Multiple Switching Gates
复制标题
多开关门的主基底噪声耦合机制
DOI：
--
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
O. Hartin
中科院分区：
文献类型：
--
作者：
E. Salman;E. Friedman;R. Secareanu;O. Hartin
基于物理直观模型，确定了多个开关门的主导衬底噪声耦合机制。与SPICE相比，该模型具有合理的精度。在此模型的基础上，描述了接地耦合和源/漏耦合占主导地位的区域。多个参数的影响，如上升时间，开关门的数量，去耦电容，和寄生电感上占主导地位的噪声耦合机制进行了研究。在大规模的电路中，接地耦合的主导地位，一般认为，被证明是无效的，如果足够的去耦电容使用或电路表现出低寄生电感，如倒装芯片封装。基于主噪声分析模型的应用，讨论了几种降噪技术的有效性。
The dominant substrate noise coupling mechanism is determined for multiple switching gates based on a physically intuitive model. The model exhibits reasonable accuracy as compared to SPICE. The regions where ground coupling and source/drain coupling dominate are described based on this model. The impact of multiple parameters such as the rise time, number of switching gates, decoupling capacitance, and parasitic inductance on the dominant noise coupling mechanism is investigated. The dominance of ground coupling in large scale circuits, as generally assumed, is shown to be invalid if sufficient decoupling capacitance is used or the circuit exhibits a low parasitic inductance such as a flip-chip package. The efficacy of several noise reduction techniques is discussed based on the application of the dominant noise analysis model.