Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography
Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography
复制标题
DOI：
10.1063/1.5050773
复制
发表时间：
2018-10-14
影响因子：
3.2
通讯作者：
Andreev, Aleksey
中科院分区：
文献类型：
--
作者：
Durrani, Zahid;Jones, Mervyn;Andreev, Aleksey
介绍了基于纳米级SiO2隧道势垒内隔离的磷原子的室温（RT）单掺杂剂原子量子点（QD）晶体管的电气操作。与硅中的单掺杂剂晶体管相比，其中QD势阱是浅的，并且设备操作限于低温温度，在这里，深（类似于2 eV）势阱允许在RT下进行电子约束。我们的晶体管使用类似于10 nm尺寸尺度的Si/SiO2/Si点接触隧道结，通过扫描探针光刻和几何氧化来定义。在290 K下测量“库仑金刚石”电荷稳定性图，其中QD添加能量类似于0.3 eV。理论模拟给出了与磷原子分离类似的数量级的QD尺寸，其类似于2nm。提取的能量状态预测的非谐量子点的潜力，拟合使用莫尔斯振荡器的潜力。这些结果将单原子晶体管的操作扩展到RT，使绝缘体中杂质原子的隧穿光谱，并允许确定SiO2中P原子的能量分布。由AIP出版社出版。
Electrical operation of room-temperature (RT) single dopant atom quantum dot (QD) transistors, based on phosphorous atoms isolated within nanoscale SiO2 tunnel barriers, is presented. In contrast to single dopant transistors in silicon, where the QD potential well is shallow and device operation limited to cryogenic temperature, here, a deep (similar to 2 eV) potential well allows electron confinement at RT. Our transistors use similar to 10 nm size scale Si/SiO2/Si point-contact tunnel junctions, defined by scanning probe lithography and geometric oxidation. "Coulomb diamond" charge stability plots are measured at 290 K, with QD addition energy similar to 0.3 eV. Theoretical simulation gives a QD size of similar order to the phosphorous atom separation similar to 2 nm. Extraction of energy states predicts an anharmonic QD potential, fitted using a Morse oscillator-like potential. The results extend single-atom transistor operation to RT, enable tunneling spectroscopy of impurity atoms in insulators, and allow the energy landscape for P atoms in SiO2 to be determined. Published by AIP Publishing.