High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems
High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems
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DOI：
10.1063/1.1595714
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发表时间：
2003-08-04
影响因子：
4
通讯作者：
Zaima, S
中科院分区：
文献类型：
--
作者：
Kobayashi, K;Yabashi, M;Zaima, S
利用来自第三代高能同步辐射装置SPring-8的高通量密度X射线，实现了6 keV光子能量的高分辨率X射线光电子能谱（XPS）。该方法已被应用于高k HfO 2/夹层/Si互补金属氧化物半导体栅介质结构的分析。随着我们的系统的高能量分辨率和高吞吐量，化学状态的差异，观察到在Si 1 s，Hf 3d，和O 1 s的沉积和退火样品的峰。结果表明，SiOxNy中间层是更有效地控制界面结构比SiO2。我们的结果表明，高分辨率XPS与来自同步加速器源的硬X射线具有广泛的适用性。(C)2003年，美国物理学会。
High-resolution x-ray photoelectron spectroscopy (XPS) at 6 keV photon energy has been realized utilizing high-flux-density x rays from the third generation high-energy synchrotron radiation facility, SPring-8. The method has been applied to analysis of high-k HfO2/interlayer/Si complementary metal-oxide-semiconductor gate-dielectric structures. With the high energy resolution and high throughput of our system, chemical-state differences were observed in the Si 1s, Hf 3d, and O 1s peaks for as-deposited and annealed samples. The results revealed that a SiOxNy interlayer is more effective in controlling the interface structure than SiO2. Our results show the wide applicability of high resolution XPS with hard x rays from a synchrotron source. (C) 2003 American Institute of Physics.