Wafer-Scale Fabrication of Two-Dimensional PtS2/PtSe2 Heterojunctions for Efficient and Broad band Photodetection
Wafer-Scale Fabrication of Two-Dimensional PtS2/PtSe2 Heterojunctions for Efficient and Broad band Photodetection
复制标题
用于高效宽带光电检测的二维 PtS2/PtSe2 异质结的晶圆级制造
DOI：
10.1021/acsami.8b13620
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发表时间：
2018
影响因子：
9.5
通讯作者：
Li Shaojuan
中科院分区：
文献类型：
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作者：
Yuan Jian;Sun Tian;Hu Zhixin;Yu Wenzhi;Ma Weiliang;Zhang Kai;Sun Baoquan;Lau Shu Ping;Bao Qiaoliang;Lin Shenghuang;Li Shaojuan
范德华异质结构的制备主要是从体相剥离的二维(2D)材料，这在很大程度上受到大批量制造的限制。在这里，我们展示了在SiO_2/Si衬底上大面积覆盖的多层pts2/ptSe2异质结，其最大直径为2“，提供了能够满足实际应用需求的吞吐量。对pts2/ptSe2异质结的电学性质进行了理论模拟。在不同波长(405-2200 nm)的激光照射下，观察到异质结的零偏压光响应。PTS2/PtSe2异质结在红外波段表现出较高的量子效率和宽带光响应，其外量子效率下限分别为1064 nm的1.2%、1550 nm的0.2%和2200 nm的0.05%，并且在几十毫秒量级上具有较快的响应时间。本工作所展示的大面积、宽带2D异质结光探测器进一步证实了2D材料在未来低能光电子学中的巨大潜力。
The fabrication of van der Waals heterostructures mainly extends to two-dimensional (2D) materials that are exfoliated from their bulk counterparts, which is greatly limited by high-volume manufacturing. Here, we demonstrate multilayered PtS2/PtSe2heterojunctions covering a large area on the SiO2/Si substrate with a maximum size of 2″ in diameter, offering throughputs that can meet the practical application demand. Theoretical simulation was carried out to understand the electronic properties of the PtS2/PtSe2heterojunctions. Zero-bias photoresponse in the heterojunctions is observed under laser illumination of different wavelengths (405–2200 nm). The PtS2/PtSe2heterojunctions exhibit broad band photoresponse and high quantum efficiency at infrared wavelengths with lower bounds for the external quantum efficiencies being 1.2% at 1064 nm, 0.2% at 1550 nm, and 0.05% at 2200 nm, and also relatively fast response time at the dozens of millisecond level. The large area, broad band 2D heterojunction photodetector demonstrated in this work further corroborates the great potential of 2D materials in the future low-energy optoelectronics.