Radiation damage and high resolution electron microscopy of polydiacetylene crystals
Radiation damage and high resolution electron microscopy of polydiacetylene crystals
复制标题
聚二乙炔晶体的辐射损伤和高分辨率电子显微镜
DOI：
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发表时间：
1984
期刊：
影响因子：
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通讯作者：
Robert J. Young
中科院分区：
文献类型：
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作者：
R. T. Read;Robert J. Young
研究了辐射损伤与高分辨电子显微镜(HREM)在聚二乙炔单晶中的应用之间的关系。这种损伤是由于电子衍射图的衰变和明场和暗场显微照片对比度的丧失造成的。研究发现，两种聚二乙炔衍生物的损伤率是不同的，可能是通过交联发生的。结果表明，从最大电阻导数可以得到平行于链方向、间距为0.9±0.1 nm的晶格图像。首次在聚合物晶体中获得了链端位错的图像。讨论了将高分辨电子显微镜应用于聚合物的问题和对单个分子成像的条件。
The relationship between radiation damage and the application of high resolution electron microscopy (HREM) to polydiacetylene single crystals has been examined. The damage is seen to occur by the decay of electron diffraction patterns and the loss of contrast in bright- and dark-field micrographs. The rate of damage was found to be different for the two polydiacetylene derivatives studied and to take place probably by cross-linking. It was found that lattice images from planes parallel to the chain direction with a spacing of 0.9±0.1 nm could be obtained from the most resistant derivative. Images of chain-end dislocations were obtained for the first time in a polymer crystal. The problems of applying HREM to polymers and the conditions for imaging individual molecules are discussed.