Ultrasound-assisted electrodeposition of SnS: Effect of ultrasound waves on the physical properties of nanostructured SnS thin films
Ultrasound-assisted electrodeposition of SnS: Effect of ultrasound waves on the physical properties of nanostructured SnS thin films
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DOI：
10.1016/j.jallcom.2016.06.201
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发表时间：
2016-11-25
影响因子：
6.2
通讯作者：
Vatan, H. Nasiri
中科院分区：
文献类型：
--
作者：
Kafashan, Hosein;Azizieh, Mahdi;Vatan, H. Nasiri
以2mm SnCl2和16mm Na2S2O3水溶液为基材，采用电化学沉积法在氟掺杂氧化锡（FTO）衬底上制备了纳米结构的SnS薄膜。溶液的pH、温度、时间和沉积电位(E)分别保持在2.10、60℃、30分钟和-1 V。利用超声波合成了超声辅助电沉积的SnS薄膜。采用x射线衍射（XRD）、x射线光电子能谱（XPS）、场发射扫描电镜（FESEM）、室温光致发光（PL）和紫外可见光谱对沉积薄膜进行了表征。沉积的SnS纳米结构为多晶，具有正交结构。通过施加超声波，降低了晶体质量。FESEM图像显示，超声波是导致SnS纳米结构形貌变化的主要原因。同样，通过应用超声波，可以产生更多的薄平面，从而形成二维（2D） SnS。与电沉积的SnS相比，超声辅助电沉积的SnS薄膜的PL光谱出现了红移。超声辅助电沉积SnS的光学带隙能（E-g）从1.5 eV降低到1.45 eV。此外，超声辅助电沉积的SnS比电沉积的SnS具有更高的太阳能电池转换效率。(C) 2016 Elsevier B.V.版权所有
Nanostructured SnS thin films were prepared using an electrochemical deposition method on fluorine doped tin oxide (FTO) substrate from aqueous solution containing 2 mM SnCl2 and 16 mM Na2S2O3. The pH, temperature, time, and deposition potential (E) of the solution were remained at 2.10, 60 degrees C, 30 minutes and -1 V, respectively. The ultrasonic waves were applied to synthesize ultrasound-assisted electrodeposited SnS thin film. The characterization of deposited thin films was carried out by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), room temperature photoluminescence (PL) and UV-Vis spectroscopy. The deposited SnS nanostructures were polycrystalline with orthorhombic structure. By applying ultrasonic waves, the crystalline quality was decreased. The FESEM images revealed that the ultrasonic waves are responsible for the changes in the morphology of the SnS nanostructures. Also by applying ultrasonic waves, more thin planes were created which led to formation of two dimensional (2D) SnS. The PL spectra of the ultrasound-assisted electrodeposited SnS film showed a red shift compared to the electrodeposited SnS. The optical bandgap energy (E-g) of the ultrasound-assisted electrodeposited SnS decreased from 1.5 eV to 1.45 eV. In addition, the ultrasound-assisted electrodeposited SnS has greater conversion efficiency of solar cell than that of the electrodeposited SnS. (C) 2016 Elsevier B.V. All rights reserved.