Transparent and conductive oxide films of the perovskite LaxSr1−xSnO3 (x ⩽ 0.15): epitaxial growth and application for transparent heterostructures
Transparent and conductive oxide films of the perovskite LaxSr1−xSnO3 (x ⩽ 0.15): epitaxial growth and application for transparent heterostructures
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DOI：
10.1088/0022-3727/43/3/035403
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发表时间：
2010-01
期刊：
影响因子：
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通讯作者：
Haifeng Wang;X. Jiao;Qinzhuang Liu;X. Xuan;Feng Chen;Wenbin Wu
中科院分区：
文献类型：
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作者：
Haifeng Wang;X. Jiao;Qinzhuang Liu;X. Xuan;Feng Chen;Wenbin Wu
Transparent and conductive oxide (TCO) films with a cubic perovskite structure, lanthanum-doped strontium stannate LaxSr1−xSnO3 (x = 0–0.15) (LSSO), have been grown epitaxially on SrTiO3(0 0 1) substrates by the pulsed laser deposition method. The doping concentration and growth parameters were optimized based on the high-resolution x-ray diffraction and electric transport measurements. We found that the optimum doping level is around x = 0.07, and the epitaxial films can be grown at temperatures as low as 600 °C and in atmospheres compatible with many other perovskite oxide films. They are n-type TCO films, showing high optical transmittance in the visible range with a direct allowed band gap of 4.65 eV, and a weak metallic transport behaviour with a low resistivity of ∼4.0 mΩ cm within 10–300 K. Due to a very close lattice match with the ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) and multiferroic BiFeO3 (BFO), all-perovskite LSSO(Pt)PZT(BFO)/LSSO capacitors and p-PZT(⩽20 nm)/n-LSSO [p-BFO (100 nm)/n-LSSO] p–n junctions have also been fabricated and characterized. The square polarization versus electric-field hysteresis loops, good rectifying characteristics, high optical transmittance, as well as the epitaxial growth exhibited by the heterostructures, strongly suggest that the LSSO films are potential candidates for use in transparent thin-film devices.
