Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation
Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation
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DOI：
10.1109/ted.2017.2657223
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发表时间：
2017-02
影响因子：
3.1
通讯作者：
J. Hasegawa;Loris Pace;L. Phung;M. Hatano;D. Planson
中科院分区：
文献类型：
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作者：
J. Hasegawa;Loris Pace;L. Phung;M. Hatano;D. Planson
我们研究了一种设计光触发晶闸管的方法，这要归功于TCAD。仿真模型的准确性，特别是保持电流和最小入射光强度打开，与实验结果进行了比较。通过模拟研究了SiC外延层寿命和入射光特性（波长和强度）对光触发4 H-SiC晶闸管特性的影响。我们考虑了量子效率、穿透深度和光子能量的波长依赖性。保持电流和导通时间取决于寿命。开启器件的最小强度显著取决于波长。当波长从380 nm变化到325 nm时，该强度变为小于0.003倍。此外，即使光强很小，恒定入射光也会影响击穿电压。
We investigated a methodology to design light-triggered thyristors thanks to TCAD. The simulation model accuracy, especially the holding current and the minimum incident light intensity to turn-ON, were compared with experimental results. The influence of SiC epitaxial layer lifetime and the incident light properties (wavelength and intensity) on the optically triggered 4H-SiC thyristor characteristics have been studied by simulation. We considered the wavelength dependence of quantum efficiency, penetration depth, and photon energy. The holding current and turn-ON time depends on the lifetime. The minimum intensity to turn-ON the device significantly depends on the wavelength. This intensity becomes less than 0.003 times when the wavelength changed from 380 to 325 nm. In addition, the breakover voltage is affected by the constant incident light even if the intensity is tiny.